High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
High-performance nanowire field-effect transistors
Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...
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Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22033, Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, VA 22033, Materials Science and Engineering Division, National Institute of Standards an...
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Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier...
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We report the fabrication, and electrical and optical characterization, of solution-liquid-solid (SLS) grown CdSe nanowire field-effect transistors. Ultrathin nanowires (7–12 nm diameters) with lengths between 1 $m and 10 $m were grown by the SLS technique. Al-CdSe-Al junctions are then defined over oxidized Si substrate using photolithography. The nanowires, which were very resistive in the da...
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Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~10 and hole mobilities of ~13 cm/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be us...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2013
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2012.2234078